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mosfet metaloxidesemiconductorfieldeffecttransistor coolmos?e6600v 600vcoolmos?e6powertransistor ipx60r600e6 datasheet rev.2.2 final powermanagement&multimarket
drain pin 2 gate pin 1 source pin 3 600v coolmos " e6 power transistor IPD60R600E6, ipp60r600e6 ipa60r600e6 finaldata sheet 2 rev. 2.0, 2010-04-12 1 description coolmos " is a revolutionary technology for high voltage power mosfets, designed according to the superjunction (sj) prin ciple and pioneered by infineon technologies. coolmos " e6 series combines the experience of the leading sj mosfet supplier wi th high class innovation. the offered devices provide all bene fits of a fast switching sj mosfet while not sacrificing ease of use. extremely low switching and conduction losses make switchin g applications even more efficient, more compact, lighter, a nd cooler. features extremely low losses due to very low fom r dson *q g and e oss very high commutation ruggedness easy to use/drive jedec 1) qualified, pb-free plating, halogen free (excluding to-252) applications pfc stages, hard switching pwm stages and resonant switching pwm stages for e.g. pc silverbox, adapter, lcd & pdp tv, lighting, server, telecom and ups. please note: for mosfet paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 1) j-std20 and jesd22 table 1 key performance parameters parameter value unit v ds @ t j,max 650 v r ds(on),max 0.6 ! q g,typ 20.5 nc i d,pulse 19 a e oss @ 400v 1.9 j body diode d i /d t 500 a/s type / ordering code package marking related links IPD60R600E6 pg-to252 ifx coolmos webpage ipp60r600e6 pg-to220 6r600e6 ifx design tools ipa60r600e6 pg-to220 fullpak rev. 2.2, 2014-12-10
600v coolmos " e6 power transistor ipx60r600e6 table of contents finaldata sheet 3 rev. 2.0, 2010-04-12 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 table of contents rev. 2.2, 2014-12-10
600v coolmos " e6 power transistor ipx60r600e6 maximum ratings finaldata sheet 4 rev. 2.0, 2010-04-12 2 maximum ratings at t j = 25 c, unless otherwise specified. table 2 maximum ratings parameter symbol values unit note / test condition min. typ. max. continuous drain current 1) 1) limited by t j,max. maximum duty cycle d=0.75 i d - - 7.3 a t c = 25 c 4.6 t c = 100c pulsed drain current 2) 2) pulse width t p limited by t j,max i d,pulse - - 19 a t c =25 c avalanche energy, single pulse e as - - 133 mj i d =1.3 a, v dd =50 v (see table 21) avalanche energy, repetitive e ar - - 0.2 i d =1.3 a, v dd =50 v avalanche current, repetitive i ar - - 1.3 a mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...480 v gate source voltage v gs -20 - 20 v static -30 30 ac (f>1 hz) power dissipation for to-220, to-252 p tot - - 63 w t c =25 c power dissipation for to-220 fullpak p tot - - 28 w t c =25 c operating and storage temperature t j , t stg -55 - 150 c mounting torque to-220 - - 60 ncm m3 and m3.5 screws mounting torque to-220 fullpak 50 m2.5 screws continuous diode forward current i s - - 6.3 a t c =25 c diode pulse current 2) i s,pulse - - 19 a t c =25 c reverse diode dv/dt 3) 3) identical low side and high side switch with identical r g dv/dt - - 15 v/ns v ds =0...400 v, i sd " i d , t j =25 c maximum diode commutation speed 3) di f /dt 500 a/s (see table 22) rev. 2.2, 2014-12-10
600v coolmos " e6 power transistor ipx60r600e6 thermal characteristics finaldata sheet 5 rev. 2.0, 2010-04-12 3 thermal characteristics table 3 thermal characteristics to-220 (ipp60r600e6) parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc - - 2.0 c/w thermal resistance, junction - ambient r thja - - 62 leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from case for 10 s table 4 thermal characteristics to-220fullpak (ipa60r600 e6) parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc - - 4.5 c/w thermal resistance, junction - ambient r thja - - 80 leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from case for 10 s table 5 thermal characteristics to-252 (IPD60R600E6) parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc - - 2.0 c/w thermal resistance, junction - ambient r thja - - 62 smd version, device on pcb, minimal footprint 35 smd version, device on pcb, 6cm 2 cooling area 1) 1) device on 40mm*40mm*1.5mm one layer epoxy pcb fr4 with 6cm 2 copper area (thickness 70m) for drain connection. pcb is vertical without air stream cooling. soldering temperature, wave- & reflow soldering allowed t sold - - 260 c reflow msl1 rev. 2.2, 2014-12-10
600v coolmos " e6 power transistor ipx60r600e6 electrical characteristics finaldata sheet 6 rev. 2.0, 2010-04-12 4 electrical characteristics electrical characteristics, at t j=25 c, unless otherwise specified. table 6 static characteristics parameter symbol values unit note / test condition min. typ. max. drain-source breakdown voltage v (br)dss 600 - - v v gs =0 v, i d =0.25 ma gate threshold voltage v gs(th) 2.5 3 3.5 v ds = v gs , i d =0.20ma zero gate voltage drain current i dss - - 1 a v ds =600 v, v gs =0 v, t j =25 c - 10 - v ds =600 v, v gs =0 v, t j =150 c gate-source leakage current i gss - - 100 na v gs =20 v, v ds =0 v drain-source on-state resistance r ds(on) - 0.54 0.60 ! v gs =10 v, i d =2.4 a, t j =25 c - 1.40 - v gs =10 v, i d =2.4a, t j =150 c gate resistance r g - 10 - ! f =1 mhz, open drain table 7 dynamic characteristics parameter symbol values unit note / test condition min. typ. max. input capacitance c iss - 440 - pf v gs =0 v, v ds =100 v, f =1 mhz output capacitance c oss - 30 - effective output capacitance, energy related 1) 1) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss c o(er) - 21 - v gs =0 v, v ds =0...480 v effective output capacitance, time related 2) 2) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss c o(tr) - 88 - i d =constant, v gs =0 v v ds =0...480v turn-on delay time t d(on) - 10 - ns v dd =400 v, v gs =13 v, i d =3 a, r g = 6.8 ! (see table 20) rise time t r - 8 - turn-off delay time t d(off) - 58 - fall time t f - 11 - rev. 2.2, 2014-12-10
600v coolmos " e6 power transistor ipx60r600e6 electrical characteristics finaldata sheet 7 rev. 2.0, 2010-04-12 table 8 gate charge characteristics parameter symbol values unit note / test condition min. typ. max. gate to source charge q gs - 2.5 - nc v dd =480 v, i d =3.0a, v gs =0 to 10 v gate to drain charge q gd - 10.5 - gate charge total q g - 20.5 - gate plateau voltage v plateau - 5.4 - v table 9 reverse diode characteristics parameter symbol values unit note / test condition min. typ. max. diode forward voltage v sd - 0.9 - v v gs =0 v, i f =3.0a, t j =25 c reverse recovery time t rr - 250 - ns v r =400 v, i f =3.0a, d i f /d t =100 a/s (see table 22) reverse recovery charge q rr - 2.1 - c peak reverse recovery current i rrm - 16 - a rev. 2.2, 2014-12-10
600v coolmos " e6 power transistor ipx60r600e6 electrical characteristics diagrams finaldata sheet 8 rev. 2.0, 2010-04-12 5 electrical characteristics diagrams table 10 power dissipation to-220, to-252 power dissipation to-220 fullpak p tot = f( t c ) p tot = f( t c ) table 11 max. transient thermal impedance to-220, to-252 max. transient thermal impedance to-220 fullpak z (thjc) =f(tp); parameter: d=t p /t z (thjc) =f(tp); parameter: d=t p /t rev. 2.2, 2014-12-10
600v coolmos " e6 power transistor ipx60r600e6 electrical characteristics diagrams finaldata sheet 9 rev. 2.0, 2010-04-12 table 12 safe operating area t c =25 c to-220, to-252 safe operating area t c =25 c to-220 fullpak i d =f(v ds ); t c =25 c; d=0; parameter t p i d =f(v ds ); t c =25 c; d=0; parameter t p table 13 safe operating area t c =80 c to-220, to-252 safe operating area t c =80 c to-220 fullpak i d =f(v ds ); t c =80 c; d=0; parameter t p i d =f(v ds ); t c =80 c; d=0; parameter t p rev. 2.2, 2014-12-10
600v coolmos " e6 power transistor ipx60r600e6 electrical characteristics diagrams finaldata sheet 10 rev. 2.0, 2010-04-12 table 14 typ. output characteristics t c =25 c typ. output characteristics t j =125 c i d =f( v ds ); t j =25 c; parameter: v gs i d =f( v ds ); t j =125 c; parameter: v gs table 15 typ. drain-source on-state resistance drain-source on-st ate resistance r ds(on) =f( i d ); t j =125 c; parameter: v gs r ds(on) =f( t j ); i d =2.4 a; v gs =10 v rev. 2.2, 2014-12-10
600v coolmos " e6 power transistor ipx60r600e6 electrical characteristics diagrams finaldata sheet 11 rev. 2.0, 2010-04-12 table 16 typ. transfer characteristics typ. gate charge i d =f( v gs ); v ds =20v v gs =f( q gate ), i d =3.0a pulsed table 17 avalanche energy drain-source breakdown voltage e as =f( t j ); i d =1.3 a; v dd =50 v v br(dss) =f( t j ); i d =0.25 ma rev. 2.2, 2014-12-10
600v coolmos " e6 power transistor ipx60r600e6 electrical characteristics diagrams finaldata sheet 12 rev. 2.0, 2010-04-12 table 18 typ. capacitances typ. c oss stored energy c=f( v ds ); v gs =0 v; f =1 mhz e oss =f( v ds ) table 19 forward characteristics of reverse diode i f =f( v sd ); parameter: t j rev. 2.2, 2014-12-10
600v coolmos " e6 power transistor ipx60r600e6 test circuits finaldata sheet 13 rev. 2.0, 2010-04-12 6 test circuits table 20 switching times test circuit and waveform for induc tive load switching times test circuit for inductive load switching t ime waveform table 21 unclamped inductive load test circuit and waveform unclamped inductive load test circuit unclamped inductive waveform table 22 test circuit and waveform for diode characteristic s test circuit for diode characteristics diode recovery wave form v ds v gs v ds v gs t d(on) t d(off) t r t on t f t off 10% 90% v ds i d v ds v d v (br)ds i d v ds v ds i d r g1 r g2 r g1 = r g2 ) / # $ #/ $ 00 %$! '$! --, --, $ --, .*+$$$&& ! ) # ) ! . --, " . $ $ ) #/ # / 00 $ 00 $ $ . $ ) ( " ( 00 ! ! . ) " ! rev. 2.2, 2014-12-10
600v coolmos " e6 power transistor ipx60r600e6 package outlines finaldata sheet 14 rev. 2.0, 2010-04-12 7 package outlines figure 1 outlines to-220, dimensions in mm/inches rev. 2.2, 2014-12-10
+ 5 6 **m =^^[fgkm e6 h^fta lap]bxbc^a ip (%!' "!! &% '$ + 9 ) ; 9$ * =# = . 3 @3 .# 0 )# ' ),/ '# )1(7/*06 01" z8b00003319 2.5 4*8,5,10 04 05-05-2014 ,557* )'6* *7412*'0 241-*(6,10 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 /,..,/*6*45 min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 ,0(+*5 0.193 max 0.112 5('.* 5mm 0 2.5 9# 0.037 0.95 1.38 0.054 9& 0.026 0.65 1.51 0.059 9% 0.026 0.65 1.38 0.054 ;xvc`t ! dcb[x]t e<%hd **( ;c[[e5@$ sx\t]ax^]a x] \\'x]rwta /45<487 @dc=;?7b final data sheet rev. 2.5, 2014-12-09 rev. 2.2, 2014-12-10
600v coolmos " e6 power transistor ipx60r600e6 package outlines finaldata sheet 16 rev. 2.0, 2010-04-12 figure 3 outlines to-252, dimensions in mm/inches rev. 2.2, 2014-12-10
17 600vcoolmos?e6powertransistor ipx60r600e6 rev.2.2,2015-02-11 revisionhistory ipx60r600e6 revision:2015-02-11,rev.2.2 previous revision revision date subjects (major changes since last revision) 2.0 2011-06-08 release final data sheet 2.1 2011-09-14 - 2.2 2015-02-11 pg-to220 fullpak package outline update (creation:2014-12-10) welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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